Dr. Pfeiffer is a Senior Research Scholar in the Department of Electrical Engineering at Princeton University. He is an expert in the materials synthesis technique of Molecular Beam Epitaxy especially as it applies to the synthesis of gallium arsenide and aluminum arsenide. The electronic interface between the semiconductor gallium arsenide and the near-insulator aluminum gallium arsenide is among the most perfect in all of nature, allowing the fabrication of structures in which the electronic carriers are confined to the semiconducting regions deep within the interior of a near-perfect single crystal. His team aims to produce the world’s highest-quality material of this kind in collaboration with other labs around the world. Dr. Pfeiffer has been awarded the James C. McGroddy International Prize for New Materials by the American Physical Society and he has been elected to the U.S. National Academy of Sciences. Dr. Pfeiffer earned his PhD from Johns Hopkins University.
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Emergent Phenomena in Quantum Systems
Princeton University, Department of Electrical Engineering