• Date Awarded:
    Nov 2010
     
  • Amount:
    $2,215,146
     
  • Term:
    39 months
     
  • Grant ID:
    GBMF2719
     
  • Funding Area:
    Science
     
 
 

To design and construct a Molecular Beam Epitaxy Laboratory capable of producing the highest quality gallium arsenide and aluminum gallium arsenide semiconductor hetero-structures in the world. Funding will be used to produce custom ultra-high purity specimens for physics researchers and to begin training the next generation that will be capable of growing ultra-high purity materials.

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Princeton University, Princeton Institute for the Science and Technology of Materials (9)

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