• Date Awarded:
    Nov 2010
  • Amount:
  • Term:
    39 months
  • Grant ID:
  • Funding Area:

To design and construct a Molecular Beam Epitaxy Laboratory capable of producing the highest quality gallium arsenide and aluminum gallium arsenide semiconductor hetero-structures in the world. Funding will be used to produce custom ultra-high purity specimens for physics researchers and to begin training the next generation that will be capable of growing ultra-high purity materials.

Related Grants

Princeton University, Princeton Institute for the Science and Technology of Materials (9)

Help us spread the word.

Creating positive outcomes for future generations.

Learn More

Recent News